A Multifunctional Double Pulse Tester for Cascode GaN Devices

Thermal Behavior Investigation of Cascode GaN HEMTs

This paper presents the evaluation of heat generation behavior and related thermal measurement analysis of packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) cascaded with low-voltage MOSFET and SiC SBD. Since thermal management is extremely important for high power packaging, a hybrid integration of the GaN HEMTs onto a DBC substrate and metal case is proposed. We investi...

Characterization and Failure Mode Analysis of Cascode GaN HEMT

Simulation Model Development for Packaged Cascode Gallium Nitride Field-Effect Transistors

This paper presents a simple behavioral model with experimentally extracted parameters for packaged cascode gallium nitride (GaN) field-effect transistors (FETs). This study combined a level-1 metal–oxide–semiconductor field-effect transistor (MOSFET), a junction field-effect transistor (JFET), and a diode model to simulate a cascode GaN FET, in which a JFET was used to simulate a metal-insulat...

GaN-based NDR Devices for THz Generation

GaN-based Negative Differential Resistance (NDR) diode oscillators have been studied by employing Gunn design criteria applicable to this material system. Numerical simulations were used to carry out large-signal analysis of the GaN NDR diode oscillators in order to evaluate their potential for THz signal generation. It was found that, due to the higher electron velocity and reduced time consta...

Multifunctional interventional devices for MRI: a combined electrophysiology/MRI catheter.

The design and application of a two-wire electrophysiology (EP) catheter that simultaneously records the intracardiac electrogram and receives the MR signal for active catheter tracking is described. The catheter acts as a long loop receiver, allowing for visualization of the entire catheter length while simultaneously behaving as a traditional two-wire EP catheter, allowing for intracardiac el...